Distribution of Dislocations near the Interface in AlN Crystals Grown on Evaporated SiC Substrates
نویسندگان
چکیده
منابع مشابه
Self-consistent scattering analysis of Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates using photo-Hall effect measurements
Hall effect measurements on undoped Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates were carried out as a function of the temperature (30–300 K) and magnetic field (0–1.4 T). Measurements were carried out under dark and after-illumination conditions. After the dark measurements, the samples were illuminated with a blue light emitting diode for 30 min, and then the same measu...
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ژورنال
عنوان ژورنال: Crystals
سال: 2017
ISSN: 2073-4352
DOI: 10.3390/cryst7060163